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| schottky diodes + features z extremely fast switching speed z low forward voltage - marking: jv maximum ratings @t a =25 parameter symbol limits unit non-repetitive peak reverse voltage v rm 30 v dc blocking voltage v r 21 v average rectified output current i o 100 ma forward continuous current i f 200 ma repetitive peak forward current i frm 300 ma forward surge current i fsm 600 ma power dissipation pd 200 mw thermal resistance,junction to ambient air r ja 625 /w junction temperature t j 125 storage temperature range t stg -65-150 electrical characteristics @t a =25 parameter symbol conditions min. typ. max. unit reverse breakdown voltage v (br)r i r =100 a 30 v v f1 i f =0.1ma 240 mv v f2 i f =1.0ma 320 mv v f3 i f =10ma 400 mv v f4 i f =30ma 500 mv forward voltage v f5 i f =100ma 1000 mv reverse current i r v r =25v 2.0 ua reverse recovery time t rr i f =10ma, i r =10ma to 1ma , r l =100 5.0 ns capacitance between terminals c t v r =1v,f=1mhz 10 pf sod-523 BAT54X 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics BAT54X 2 date:2011/05 www.htsemi.com semiconductor jinyu |
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